High-performance two-dimensional p-type transistors based on GaSe layers: an ab-initio study

TL;DR

This paper uses ab initio calculations to analyze ultrascaled GaSe monolayer transistors, revealing their excellent performance and suppression of tunneling due to valence band edge properties.

Contribution

It provides a detailed ab initio study of GaSe monolayer transistors, highlighting their potential for high-performance, scaled devices with reduced short-channel effects.

Findings

GaSe monolayers exhibit high ON-current

Valence band shape suppresses intraband tunneling

Reduced short-channel effects in ultrascaled devices

Abstract

Ultrascaled GaSe field effect transistors are investigated through ab initio calculations. GaSe monolayers, 3 nm long, exhibit excellent performance with reduced short-channel effects and considerable high ON-current. Such device characteristics are due to the valence band edge shape, which leads to very heavy holes in the transport direction and eventually suppresses intraband tunneling, detrimental for correct operation in the OFF state.