Electrical properties of in-plane-implanted graphite nanoribbons

TL;DR

This study investigates how low-energy Ga+ ion implantation affects the electrical resistance of graphite nanoribbons, revealing a reduction in resistance likely due to ionic channeling, which opens new avenues for charge carrier modulation.

Contribution

It demonstrates that in-plane Ga+ ion implantation can reproducibly reduce electrical resistance in graphite nanoribbons, introducing a novel method for charge carrier control.

Findings

Reduction of electrical resistance after implantation

Evidence of ionic channeling in graphite nanoribbons

Potential for charge carrier modulation in mesoscopic graphite

Abstract

We studied the effect of low energy (30 keV) ionic implantation of Ga+ in the direction parallel to the graphene planes (perpendicular to c-axis) in oriented graphite ribbons with widths around 500 nm. Our experiments have reproducibly shown a reduction of electrical resistance upon implan- tation consistent with the occurrence of ionic channeling in our devices. Our results allow for new approaches in the modulation of the charge carrier concentration in mesoscopic graphite.