Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures

TL;DR

This paper presents a practical ionic-liquid-gating setup for low-temperature measurements that enhances stability and reduces electronic inhomogeneity caused by thermal strain, enabling more reliable exploration of novel physical phenomena.

Contribution

The authors introduce a new setup technique that improves the stability and uniformity of ionic-liquid-gated transistors at low temperatures.

Findings

Enhanced measurement stability at low temperatures.

Reduced electronic inhomogeneity due to shear strain.

Applicable to various materials for low-temperature physics studies.

Abstract

The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this paper, we provide a practical technique for setting up ionic-liquid-gated field-effect transistors for low-temperature measurements. It allows stable measurements and reduces the electronic inhomogeneity by reducing the shear strain generated in frozen ionic liquid.