Nano-imaging of intersubband transitions in van der Waals quantum wells
Peter Schmidt, Fabien Vialla, Simone Latini, Mathieu Massicotte,, Klaas-Jan Tielrooij, Stefan Mastel, Gabriele Navickaite, Mark Danovich, David, A. Ruiz-Tijerina, Celal Yelgel, Vladimir Falko, Kristian Thygesen, Rainer, Hillenbrand, Frank H. L. Koppens

TL;DR
This paper reports the first experimental observation of intersubband transitions in van der Waals quantum wells, demonstrating their potential for advanced optoelectronic devices with atomically sharp interfaces and high design flexibility.
Contribution
It introduces van der Waals quantum wells for intersubband transitions and demonstrates near-field control at nanometer scale, overcoming limitations of traditional semiconductor heterostructures.
Findings
First experimental observation of intersubband transitions in van der Waals quantum wells
Near-field probing achieves nanometer-scale spectral resolution and electrostatic control
Potential for new photodetectors, LEDs, and lasers with atomically sharp interfaces
Abstract
The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions. Here, we introduce the concept of intersubband transitions in van der Waals quantum wells and report their first experimental observation. Van der Waals quantum wells are naturally formed by two-dimensional (2D) materials and hold unexplored potential to overcome the aforementioned limitations: They form atomically sharp interfaces and can easily be combined into heterostructures without lattice-matching…
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