Spin relaxation due to the D'yakonov-Perel' mechanism in 2D semiconductors with an elliptic band structure
Seyed M. Farzaneh, Shaloo Rakheja

TL;DR
This paper investigates the anisotropic spin relaxation in 2D semiconductors with elliptic band structures due to the D'yakonov-Perel' mechanism, highlighting how effective mass ratios and scattering potentials influence relaxation times.
Contribution
It introduces a theoretical model for anisotropic spin relaxation in 2D materials with elliptic bands, considering different scattering potentials and applying it to black phosphorus.
Findings
Spin relaxation time ratio depends on effective mass ratio via a power law.
Scattering potential affects the exponent in the relaxation time ratio.
Model predicts spin relaxation anisotropy in strained 2D materials.
Abstract
D'yakonov-Perel' (DP) mechanism describes the dynamics of non-equilibrium spin distribution in a two-dimensional (2D) system in the presence of Rashba spin-orbit coupling. In this paper, we study the anisotropy of spin relaxation via the DP mechanism for a 2D semiconductor with an elliptic band structure. Within the effective-mass approximation, the low-energy band structure is described using anisotropic in-plane effective mass of free carriers. Spin relaxation time of free carriers is calculated theoretically using the time evolution equation of the density matrix of a polarized spin ensemble in the strong momentum scattering regime. Results are obtained for scattering potential due to both Coulomb interaction and neutral defects in the sample. We show that the ratio of spin relaxation time in the y- and x-direction within the 2D plane displays a power-law dependence on the effective…
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Taxonomy
TopicsQuantum and electron transport phenomena · 2D Materials and Applications · Topological Materials and Phenomena
