Disorder control in crystalline GeSb2Te4 and its impact on characteristic length scales
Matthias Maximilian D\"uck, Tobias Sch\"afer, Stefan Jakobs,, Carl-Friedrich Sch\"on, Hannah Niehaus, Oana Cojocaru-Mir\'edin, Matthias, Wuttig

TL;DR
This study investigates how controlling disorder in crystalline GeSb2Te4 affects its electrical properties and characteristic length scales, revealing intrinsic insulating and metallic states influenced mainly by intragrain scattering rather than grain boundaries.
Contribution
It demonstrates a sputter-deposition method to produce a wide range of GST states and shows that electron scattering is dominated by intragrain effects, not grain boundaries.
Findings
Mean free path is much smaller than grain size, indicating intragrain scattering dominates.
Disorder tuning can switch GST between metallic and insulating states.
Grain boundaries have negligible impact on electron scattering.
Abstract
Crystalline GeSb2Te4 (GST) is remarkable material, as it allows to continuously tune the electrical resistance by orders of magnitude without involving a phase transition or stoichiometric changes, just by altering the short-range order. While well-ordered specimen are metallic, increasing amounts of disorder can eventually lead to an insulating state with vanishing conductivity in the 0K limit, but a similar number of charge carriers. These observations make disordered GST one of the most promising candidates for the realization of a true Anderson insulator. While so far the low-temperature properties have mostly been studied in films of small grain size, here a sputter-deposition process is employed that enables preparation of a large variety of these GST states including metallic and truly insulating ones. By growing films of GST on mica substrates, biaxially textured samples with…
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