Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis

TL;DR

This paper presents a microscopic theoretical analysis comparing tunnel-injection quantum-dot lasers to conventional designs, highlighting advantages in modulation bandwidth and spectral hole burning effects at telecom wavelengths.

Contribution

It provides a detailed microscopic theory for tunnel-injection lasers and demonstrates their benefits over conventional quantum-dot lasers in terms of spectral hole burning and modulation bandwidth.

Findings

Tunnel-injection lasers lack spectral hole burning, improving modulation bandwidth.

Theoretical results favor tunnel-injection design for telecom applications.

Comparison shows advantages over conventional quantum-dot lasers.

Abstract

Tunnel-injection lasers promise advantages in modulation bandwidth and temperature stability in comparison to conventional laser designs. In this paper, we present results of a microscopic theory for laser properties of tunnel-injection devices and a comparison to a conventional quantum-dot laser structure. In general, the modulation bandwidth of semiconductor lasers is affected by the steady-state occupations of electrons and holes via the presence of spectral hole burning. For tunnel-injection lasers with InGaAs quantum dot emitting at the telecom wavelength of 1,55$\mu$m, we demonstrate that the absence of spectral hole burning favors this concept over conventional quantum-dot based lasers.