Beam tests of silicon pixel 3D-sensors developed at SINTEF

TL;DR

This paper presents the development and beam test results of 3D silicon pixel sensors designed for high-radiation environments like the HL-LHC, space physics, and medical applications, demonstrating their effective performance at low bias voltages.

Contribution

It introduces SINTEF's prototype 3D silicon pixel sensors and validates their performance through CERN pion beam tests, showing their suitability for high-radiation conditions.

Findings

Sensors achieve full efficiency at 5-15V bias

Performance aligns with expectations for high-radiation environments

Suitable for HL-LHC, space physics, and medical applications

Abstract

For the purpose of withstanding very high radiation doses, silicon pixel sensors with a 3D electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests shows that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V.