Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene
Gang Qiu, Yixiu Wang, Yifan Nie, Yongping Zheng, Kyeongjae Cho,, Wenzhuo Wu, Peide D. Ye

TL;DR
This study reports the first observation of the quantum Hall effect in few-layer tellurene, revealing unique electronic properties and Landau level degeneracies through detailed transport measurements and theoretical analysis.
Contribution
It demonstrates the realization of quantum Hall effect in tellurene, a novel 2D material, and explores its electronic structure and spin-related phenomena using experimental and DFT methods.
Findings
Observation of quantum Hall effect in tellurene
Four-fold degeneracy of Landau levels
Interplay of Zeeman effect and spin-orbit coupling
Abstract
Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hosted in high mobility 2DEG with large external magnetic field at low temperature. Two-dimensional van der Waals materials, such as graphene and black phosphorus, are considered interesting material systems to study quantum transport, because it could unveil unique host material properties due to its easy accessibility of monolayer or few-layer thin films at 2D quantum limit. Here for the first time, we report direct observation of QHE in a novel low-dimensional material system: tellurene.High-quality 2D tellurene thin films were acquired from recently reported hydrothermal method with high hole mobility of nearly 3,000 cm2/Vs at low temperatures, which allows the observation of well-developed Shubnikov-de-Haas…
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