Third harmonic generation on exciton-polaritons in bulk semiconductors subject to a magnetic field
W. Warkentin, J. Mund, D. R. Yakovlev, V. V. Pavlov, R. V. Pisarev, A., V. Rodina, M. A. Semina, M. M. Glazov, E. L. Ivchenko, and M. Bayer

TL;DR
This study investigates how magnetic fields influence third harmonic generation in exciton-polaritons within bulk semiconductors, revealing a significant enhancement in GaAs due to increased oscillator strength, with less effect in CdTe and ZnSe.
Contribution
It provides the first comprehensive experimental and theoretical analysis of magnetic field effects on THG in exciton-polaritons across multiple semiconductors.
Findings
THG intensity in GaAs increases fiftyfold at 10 T magnetic field.
Enhancement is moderate in CdTe and negligible in ZnSe.
The increase is mainly due to magnetic field-induced oscillator strength enhancement.
Abstract
We report on a comprehensive experimental and theoretical study of optical third harmonic generation (THG) on the exciton-polariton resonances in the zinc-blende semiconductors GaAs, CdTe, and ZnSe subject to an external magnetic field, representing a topic that had remained unexplored so far. In these crystals, crystallographic THG is allowed in the electric-dipole approximation, so that no strong magnetic-field-induced changes of the THG are expected. Therefore, it comes as a total surprise that we observe a drastic enhancement of the THG intensity by a factor of fifty for the -exciton-polariton in GaAs in magnetic fields up to 10 T. In contrast, the corresponding enhancement is moderate for CdTe and almost neglectful for ZnSe. In order to explain this strong variation, we develop a microscopic theory accounting for the optical harmonics generation on exciton-polaritons and…
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