A simple test for ideal memristors
Y. V. Pershin, M. Di Ventra

TL;DR
The paper proposes a simple, definitive experimental test to verify if a resistor with memory is an ideal memristor, addressing ambiguities caused by similar hysteresis behaviors in other memory-resistive devices.
Contribution
It introduces a straightforward duality-based test that unambiguously distinguishes ideal memristors from other resistive memory devices.
Findings
The test confirms whether a resistor with memory is truly an ideal memristor.
It resolves controversies about the physical existence of ideal memristors.
The method is practical for experimental validation across various initial states and voltages.
Abstract
An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, , its resistance depends {\it only} on the charge that has flowed through it, so that its voltage response is . It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hysteresis loop is not a definitive test of whether a resistor with memory is truly an ideal memristor because such a property is shared also by other resistors whose memory depends on additional internal state variables, other than the charge. Here, we introduce a very simple and {\it unambiguous} test that can be utilized to check experimentally if a resistor with memory is indeed an ideal memristor. Our test is based on the duality property of a capacitor-memristor circuit whereby, for any…
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