Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model

TL;DR

This paper presents a phenomenological heating model to analyze negative differential conductivity in gated graphene-phosphorene hybrid structures, highlighting carrier heating and real-space transfer effects.

Contribution

It introduces a model linking carrier heating and real-space transfer to negative differential conductivity in G-P FETs, advancing understanding of their nonlinear transport behavior.

Findings

Negative differential conductivity arises from carrier heating and real-space transfer.

The model predicts strong electric-field dependence of conductivity.

Potential applications in electromagnetic detectors and sources.

Abstract

We analyze the nonlinear carrier transport in the gated graphene-phosphorene (G-P) hybrid structures - the G-P field-effect transistors (G-P-FETs) using a phenomenological model. This model assumes that due to high carrier densities in the G-P-channel, the carrier system, including the electrons and holes in both the G- and P-layers, is characterized by a single effective temperature. We demonstrate that a strong electric-field dependence of the G-P-channel conductivity and substantially non-linear current-voltage characteristics, exhibiting a negative differential conductivity, are associated with the carrier heating and the real-space carrier transfer between the G- and P-layers. The predicted features of the G-P-systems can be used in the detectors and sources of electromagnetic radiation and in the logical circuits.