Study of external electron injection and trapping in the blow-out regime
Jari Pronold, Johannes Thomas, Alexander Pukhov

TL;DR
This paper investigates how electrons can be injected and trapped in the blow-out regime within deep plasma channels, analyzing the effects of initial energy and injection position through simulations and models.
Contribution
It introduces a semi-analytical model for electron trapping in deep plasma channels and compares it with PIC simulations, highlighting the reduced importance of injection position.
Findings
Maximum injection angle for 90% trapping depends on initial energy.
Injection position is less critical in deep plasma channels.
PIC simulations support the semi-analytical model.
Abstract
In this work we study electron side-injection and trapping in the blow-out regime in deep plasma channels. We analyze the maximum angle of injection, for which at least 90\% of the injected electrons are trapped. We discuss the dependence of this angle on the electrons' initial energy and their injection positions. In the scope of a semi-analytical blow-out model we show that the injection position is a less critical factor for trapping if electrons are injected into deep plasma channels. PIC simulations and analytical approximations support our results from the semi-analytical model.
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Taxonomy
TopicsElectron and X-Ray Spectroscopy Techniques · Integrated Circuits and Semiconductor Failure Analysis · Advancements in Photolithography Techniques
