Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)

TL;DR

This study provides a detailed nanoscale characterization of epitaxially grown single-layer WS2 on Au(111), highlighting the growth conditions, structure, and potential for spintronic applications.

Contribution

It demonstrates how to achieve a singly-oriented WS2 layer on Au(111) by controlling growth parameters, with comprehensive structural analysis.

Findings

Successful real-time monitoring of WS2 growth using x-ray photoelectron spectroscopy

Achieved a singly-oriented WS2 layer with controlled morphology and stacking

Identified the potential for spin and valley degree of freedom exploitation in this material

Abstract

We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.