Domain formation mechanism of the Si(110)"16 x 2" reconstruction

TL;DR

This study investigates the factors influencing domain formation in the Si(110)"16 x 2" surface reconstruction, revealing that surface polishing direction and step orientation determine domain orientation.

Contribution

It demonstrates that domain orientation in Si(110)"16 x 2" reconstruction is governed by step direction, independent of heating current, and confirms the reconstruction's 2D-chirality.

Findings

Domain orientation is independent of heating current direction.

Reconstruction is confirmed to be 2D-chiral.

Surface polishing direction influences domain formation.

Abstract

The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain orientations in the LEED images and confirm that the reconstruction is 2D-chiral. It is proposed that the domain orientation upon surface reconstruction is determined by the direction of monoatomic steps present on the Si(110) plane. This is in turn determined by the direction at which the surface is polished off-axis from the (110) plane.