Topological switch between second-order topological insulators and topological crystalline insulators

TL;DR

This paper explores a topological switch mechanism between second-order topological insulators and topological crystalline insulators, controlled by magnetic field orientation, with potential applications in topological circuits and high-resolution sensors.

Contribution

It introduces a method to switch between SOTIs and TCIs using magnetic field orientation, defining bulk topological numbers for both protected by mirror and inversion symmetries.

Findings

Conductance along edges changes with magnetic field orientation.

Emergence of topological corner states at specific field angles.

Potential for high-resolution magnetic sensing applications.

Abstract

We investigate a topological switch between second-order topological insulators (SOTIs) and topological crystalline insulators (TCIs). Both the SOTI and the TCI are protected by the mirror and inversion symmetries, for which we define the bulk topological numbers of the same type. We take examples of square nanodisks on the square lattice and hexagonal nanodisks on the triangular lattice. When inplane magnetic field is introduced parallel to one of the helical edges, the system becomes a TCI. The conductance along the edge is 1 in the unit of the conductance quantum $e^2/h$. As the inplane field is rotated, the conductance decreases as the gap of the edge states opens. When it becomes orthogonal to a diagonal line, two topological corner states emerge on its vertices and the system becomes a SOTI. When it becomes parallel to another edge, the system becomes again a TCI and the conductance along the original edge becomes 0 but 1 along a new edge. This may be used as a basis of a topological circuit changing switch. Alternatively, the device may be used as a sensor to measure local magnetization on a sample surface with a resolution of 10 nm.