Photoluminescence of lead-related optical centers in single-crystal diamond

TL;DR

This study reports the creation and detailed optical characterization of lead-related color centers in diamond, revealing specific emission features and their dependence on implantation and temperature, advancing quantum-optical device development.

Contribution

It introduces Pb-related centers in diamond with unique photoluminescence properties, expanding the understanding of group IV impurity centers for quantum applications.

Findings

Distinct emission peaks at 552.1 nm and 556.8 nm identified

PL intensity correlates with Pb ion implantation fluence

Spectral features vary with temperature and excitation wavelength

Abstract

We report on the creation and characterization of Pb-related color centers in diamond upon ion implantation and subse- quent thermal annealing. Their optical emission in photoluminescence (PL) regime consists of an articulated spectrum with intense emission peaks at 552.1 nm and 556.8 nm, accompanied by a set of additional lines in the 535700 nm range. The attribution of the PL emission to stable Pb-based defects is corroborated by the correlation of its intensity with the implantation fluence of Pb ions, while none of the reported features is observed in reference samples implanted with C ions. Furthermore, PL measurements performed as a function of sample temperature (143-300 K range) and un- der different excitation wavelengths (532 nm, 514 nm, 405 nm) suggest that the complex spectral features observed in Pb-implanted diamond might be related to a variety of different defects and/or charge states. This work follows from previous reports on optically active centers in diamond based on group IV impurities, such as Si, Ge and Pb. In perspective, a comprehensive study of this set of defect complexes could bring significant insight on the common features involved in their formation and opto-physical properties, thus offering a solid basis for the devel- opment of a new generation of quantum-optical devices.