Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer

TL;DR

This paper investigates the relationship between spin Hall magnetoresistance and anomalous Hall effect in a Cr2O3/Ta bilayer, revealing that boundary magnetization influences their connection through temperature-dependent measurements.

Contribution

It demonstrates the physical origin of SMR in Cr2O3/Ta and shows the contribution of AHE-induced spin currents, highlighting the role of boundary magnetization in antiferromagnetic Cr2O3.

Findings

SMR and AHE are correlated in Cr2O3/Ta bilayers.

Temperature dependence confirms the link between SMR and AHE.

Boundary magnetization influences the SMR-AHE relationship.

Abstract

The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and transverse resistances measurements confirm the relationship between SMR and AHE signals in Cr2O3/Ta structure. By means of temperature dependent magnetoresistance measurements, the physical origin of SMR in the Cr2O3/Ta structure is revealed, and the contribution to the SMR from the spin current generated by AHE has been proved. The so-called boundary magnetization due to the bulk antiferromagnetic order in Cr2O3 film may be responsible for the relationship of SMR and AHE in the Cr2O3/Ta bilayer.