Tuning intraband and interband transition rates via excitonic correlation in low-dimensional semiconductors
Josep Planelles, Alexander W. Achtstein, Riccardo Scott, Nina, Owschimikow, Juan I. Climente

TL;DR
This paper demonstrates how electron-hole correlation in low-dimensional semiconductors can be used to tune optical transition rates, enhancing or suppressing them based on nanostructure size, with implications for optoelectronic applications.
Contribution
It introduces a size-dependent method to control excitonic transition rates in nanostructures, providing new insights for designing advanced optoelectronic devices.
Findings
Valence-to-conduction transition rate can be enhanced by size
Intraband transition rates can be slowed down by inverse size
Explains superlinear volume scaling of two-photon absorption in CdSe nanoplatelets
Abstract
We show that electron-hole correlation can be used to tune interband and intraband optical transition rates in semiconductor nanostructures with at least one weakly confined direction. The valence-to-conduction band transition rate can be enhanced by a factor -- with the length of the weakly confined direction, the exciton Bohr radius and the dimensionality of the nanostructure -- while the rate of intraband and inter-valence-band transitions can be slowed down by the inverse factor, . Adding a hitherto underexplored degree of freedom to engineer excitonic transition rates, this size dependence is of interest for various opto-electronic applications. It also offers an interpretation of the superlinear volume scaling of two-photon absorption (TPA) cross-section recently reported for CdSe nanoplatelets, thus laying foundations to obtain…
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