Deformation, lattice instability, and metallization during solid-solid structural transformations under general applied stress tensor: example of Si I -> Si II
Nikolai A. Zarkevich, Hao Chen, Valery I. Levitas, and Duane D., Johnson

TL;DR
This study uses density functional theory to analyze how general applied stresses induce phase transformation, lattice instability, and metallization in silicon, revealing new insights into stress-driven phase behavior and synthesis routes.
Contribution
It introduces a phase-field based criterion for predicting Si I to Si II transformation under arbitrary stress conditions with only two parameters.
Findings
Metallization occurs before structural transformation under stress.
Critical stress combinations induce lattice instability and phase transition.
Transformation work criterion effectively predicts phase change under complex stress states.
Abstract
Density functional theory (DFT) was employed to study the stress-strain behavior, elastic instabilities, and metallization during a solid-solid phase transformation (PT) between semiconducting Si I (cubic A4) and metallic Si II (tetragonal A5 structure) when subjected to a general stress tensor. With normal stresses (, , ) acting along , , and , respectively, dictating the simulation cell, we determine combinations of 6 independent stresses that drive a lattice instability for the Si ISi II PT, and a semiconductor-metal electronic transition. Metallization precedes the structural PT, hence, a stressed Si I can be a metal. Surprisingly, a stress-free Si II is metastable in DFT. Notably, the PT for hydrostatic pressures is at 75.81 GPa, while under uniaxial stress it is 11.03 GPa (or…
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