Superinjection in diamond homojunction P-I-N

TL;DR

This paper reports a superinjection effect in diamond p-i-n diodes, allowing significantly higher electron injection than traditional doping methods, and proposes an i-p grating to further enhance efficiency, enabling advanced device design despite doping limitations.

Contribution

It introduces the superinjection phenomenon in diamond diodes and demonstrates how to surpass doping limitations for improved device performance.

Findings

Superinjection enables orders of magnitude more electrons in diamond diodes.

i-p grating further enhances electron injection efficiency.

Potential to design high-performance diamond-based electronic devices.

Abstract

Diamond and many newly emerged semiconductor materials show outstanding optical and magnetic properties. However, they cannot be as efficiently doped as silicon or gallium arsenide, which limits their practical applicability. Here, we report a superinjection effect in diamond p-i-n diodes, which gives the possibility to inject orders of magnitude more electrons into the i-region of the diode than the doping of the n-type injection layer allows. Moreover, we show that the efficiency of electron injection can be further improved using an i-p grating implemented in the i-region. The predicted superinjection effect enables to overcome fundamental limitations related to the high activation energy of donors in diamond and gives the possibility to design high-performance devices.