Track structure simulation of low energy electron damage to DNA using Geant4-DNA
Mojtaba Mokari, Mohammad Hassan Alamatsaz, Hossein Moeini, Ali Akbar, Babaei-Brojeny, and Reza Taleei

TL;DR
This study uses Geant4-DNA simulations to analyze low-energy electron interactions with DNA, assessing damage types, yields, and the influence of model parameters, with comparisons to experimental data.
Contribution
It provides a detailed simulation of DNA damage by low-energy electrons using Geant4-DNA, including direct and indirect effects, and evaluates the impact of damage thresholds.
Findings
Damage yields vary with electron energy below 500 eV.
Differences observed due to model and parameter choices.
Threshold energy significantly affects damage predictions.
Abstract
Due to the physical and chemical processes that are involved, interactions of ionizing radiations with cells lead to single- and double-strand breaks (SSB and DSB) and base damage to DNA cells. The damage may kill the cells or may be mis-repaired and lead to genetic diseases and cancers. Track structure Monte Carlo simulation of the DNA damage provides types of the damage and their frequencies. In the present work, to derive initial DNA damage, we used the Geant4-DNA code to simulate the physical, physico-chemical and chemical stages of interactions of incident beams of 100 eV to 4.5 keV electrons. By considering the direct damage of electrons and also the indirect hydroxyl radical damage to the DNA, in a simulation, simple and complex damages to SSB and DSB were investigated. Moreover, the yield of damage and the probability of types of DNA damage were evaluated. The results of these…
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