Splitting efficiency and interference effects in a Cooper pair splitter based on a triple quantum dot with ferromagnetic contacts

TL;DR

This paper provides a theoretical analysis of a triple quantum dot Cooper pair splitter with ferromagnetic contacts, revealing how spin, interference, and hopping influence transport efficiency and magnetoresistance.

Contribution

It introduces a detailed theoretical model for the spin-resolved transport in a triple quantum dot Cooper pair splitter, highlighting optimal conditions for high splitting efficiency.

Findings

Near-perfect splitting efficiency predicted in nonlinear regime

Splitting efficiency depends nonmonotonically on lead polarization and hopping

Sign changes in tunnel magnetoresistance observed across different regimes

Abstract

We theoretically study the spin-resolved subgap transport properties of a Cooper pair splitter based on a triple quantum dot attached to superconducting and ferromagnetic leads. Using the Keldysh Green's function formalism, we analyze the dependence of the Andreev conductance, Cooper pair splitting efficiency, and tunnel magnetoresistance on the gate and bias voltages applied to the system. We show that the system's transport properties are strongly affected by spin dependence of tunneling processes and quantum interference between different local and nonlocal Andreev reflections. We also study the effects of finite hopping between the side quantum dots on the Andreev current. This allows for identifying the optimal conditions for enhancing the Cooper pair splitting efficiency of the device. We find that the splitting efficiency exhibits a nonmonotonic dependence on the degree of spin polarization of the leads and the magnitude and type of hopping between the dots. An almost perfect splitting efficiency is predicted in the nonlinear response regime when the energies of the side quantum dots are tuned to the energies of the corresponding Andreev bound states. In addition, we analyzed features of the tunnel magnetoresistance (TMR) for a wide range of the gate and bias voltages, as well as for different model parameters, finding the corresponding sign changes of the TMR in certain transport regimes. The mechanisms leading to these effects are thoroughly discussed.