Quantum Random Number Generator based on Tunneling effects in Si Diode

TL;DR

This paper presents a silicon diode-based quantum random number generator that exploits tunneling effects, achieving high data rates with minimal post-processing, and offering a practical, photon-free quantum randomness source.

Contribution

It introduces a novel Si diode tunneling-based QRNG that simplifies implementation and enhances raw data quality compared to previous photon-based systems.

Findings

Raw data randomness is high and requires minimal post-processing.

Achieved data rate of 6.98MB/s, potentially up to 23MB/s with system improvements.

Utilized fixed voltage and detection of tunneling intervals as the randomness source.

Abstract

Previously, we built up a set of photon-free quantum random number generator(QRNG) with InGaAs single photon avalanche diodes. We exploited the stochastic property of quantum tunneling effect. Here, we utilized tunneling signals in Si diodes to implement quantum random number generator. In our experiment, instead of applying periodic pulses between the diode as we did in the InGaAs QRNG, we applied fixed voltage and detect time intervals between adjacent tunneling signals, as random source. This Si QRNG has a high performance in the randomness of its raw data and almost post-processing-free. Final data rate in our experiment is 6.98MB/s and could reach 23MB/s if the temperature-control system is ameliorated.