Non-Linear Photocurrent Response to Bosonic Final State Stimulation in Microcavity Diodes

TL;DR

This paper demonstrates a non-linear photocurrent enhancement in GaN-based polariton diodes at room temperature, attributed to bosonic stimulation effects during polariton lasing, supported by a kinetic model.

Contribution

It reveals the bosonic final state stimulation effect in polariton lasers through photocurrent measurements and a coupled kinetic model, a novel observation in this context.

Findings

Photocurrent shows non-linear enhancement at ~1.6 mW optical power.

The effect is linked to an Auger-like excitonic dissociation process.

Model aligns well with experimental data.

Abstract

We report the optical excitation-dependent output photocurrent characteristics of GaN-based polariton diode lasers operated under reverse-bias at room temperature. The photocurrent demonstrates a non-linear enhancement at an incident optical power of ~ 1.6 mW, which is approximately equivalent to the value of polariton lasing threshold observed when the diodes are operated under forward bias conditions. This is explained in the framework of an Auger-like process of excitonic dissociation into its constituent electron-hole pairs, which can be stimulated by the occupation of the polariton lasing states. The observed effect is a remarkable manifestation of the bosonic final state stimulation in polariton lasers. A model based on the coupled kinetic equations for the free carriers, the excitonic reservoir and the polariton condensate shows a good agreement to the experimental data.