Radiation hardness of small-pitch 3D pixel sensors up to a fluence of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$
J. Lange, G. Giannini, S. Grinstein, M. Manna, G. Pellegrini, D., Quirion, S. Terzo, D. V\'azquez Furelos

TL;DR
This study demonstrates that small-pitch 3D silicon pixel sensors maintain high efficiency and low power dissipation after exposure to extremely high radiation levels, making them ideal for HL-LHC upgrades.
Contribution
The paper presents the development and testing of small-pitch 3D silicon pixel sensors that withstand fluences beyond HL-LHC expectations, showing superior radiation hardness and operational efficiency.
Findings
High charge collection and 98% hit efficiency at high fluences
Lower bias voltage needed compared to previous sensor generations
Power dissipation remains manageable at high radiation levels
Abstract
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 5050 and 25100 m connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of n/cm, beyond the full expected HL-LHC fluences at the end of lifetime, have been carried out at Karlsruhe and CERN. The performance of the 5050 m devices has been measured in the laboratory and beam tests at CERN SPS. A high charge collected and a high hit efficiency of 98% were found up to the highest fluence. The bias voltage to reach the target efficiency of 97% at perpendicular beam incidence was found to be about 100 V at n/cm…
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