Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

TL;DR

This study explores charge transport in mixed-dimensional MoS2/silicon nanowire heterojunctions, demonstrating faster photoresponse times and providing insights for designing advanced optoelectronic devices.

Contribution

It introduces a detailed analysis of 1-D/2-D heterojunctions, showing improved response times and electrostatic effects, advancing the understanding of mixed-dimensional vdW heterojunctions.

Findings

p-n heterojunctions enhance exciton dissociation

Response time of 1 microsecond is achieved

Finite element simulations reveal electrostatic influences

Abstract

Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form non-planar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Towards that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS2 isotype heterojunctions with p-Si/MoS2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument limited response time of 1 us, which is 10 times faster than previously reported response times for planar Si/MoS2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.