Double hysteresis loops in proper uniaxial ferroelectrics

TL;DR

This paper reports the first observation of double hysteresis loops in bulk proper uniaxial ferroelectrics, specifically in Sn₂P₂S₆, explained by a quantum anharmonic oscillator model, with implications for memory technology.

Contribution

It introduces the first observation of double hysteresis loops in bulk proper uniaxial ferroelectrics and models this phenomenon using a quantum anharmonic oscillator approach.

Findings

Double hysteresis loops observed in Sn₂P₂S₆.

The phenomenon is linked to a three-well local potential.

Potential applications in triple-level cell memory technology.

Abstract

For the first time in a bulk proper uniaxial ferroelectrics, double antiferroelectric-like hysteresis loops have been observed in the case of Sn$_2$P$_2$S$_6$ crystal. The quantum anharmonic oscillator model was proposed for description of such polarization switching process. This phenomenon is related to three-well local potential of spontaneous polarization fluctuations at peculiar negative ratio of coupling constants which correspond to inter-site interaction in given sublattice and interaction between two sublattices of Sn$_2$P$_2$S$_6$ modeled crystal structure. Obtained data can be used for development of triple-level cell type memory technology.