Instrumentation Amplifier design: Comparison of CMOS-memristive to CMOS design

TL;DR

This paper explores replacing CMOS transistors with memristors in instrumentation amplifiers, resulting in reduced area, power consumption, and improved gain, while analyzing variability, temperature effects, and noise sensitivity.

Contribution

It introduces a novel memristor-based InAmp design, demonstrating advantages over traditional CMOS designs in size, power, and gain performance.

Findings

Reduced on-chip area and power consumption.

Enhanced gain and gain range.

Improved noise performance and variability handling.

Abstract

An instrumentation amplifier (InAmp) is an electronic device used in many applications, where test and measuring accuracy is required. However, one of the drawbacks of an InAmp is limited operation gain range. In this paper, we investigate the possibility of replacing CMOS transistors in InAmp with memristive devices. The application of memristors in CMOS instrumentation amplifier design has lead to reduction of on-chip area and power consumption, comparing to the original design. The memristor based implementation of InAmp design has an improved gain. The advantages of memristor application are shown, and DC and operation gain range are discussed in this paper. Furthermore, variability analysis and performance variation with respect to the temperature variation is provided. In addition, the noise sensitivity analysis is performed. Moreover, varying values of resistance levels of memristors, the operation gain range, gain accuracy as well as a the noise reduction can be improved.