Origin of magnetoresistance suppression in thin $\gamma$-MoTe$_2$
Shazhou Zhong, Archana Tiwari, George Nichols, Fangchu Chen, Xuan Luo,, Yuping Sun, Adam W. Tsen

TL;DR
This study investigates how reducing the thickness of $ ext{MoTe}_2$ affects its large magnetoresistance, revealing that decreased mobility and increased electron-hole imbalance suppress XMR, with mobility playing a more significant role.
Contribution
The paper provides a detailed analysis of the thickness-dependent suppression of magnetoresistance in $ ext{MoTe}_2$, combining classical and quantum measurements to identify key contributing factors.
Findings
Magnetoresistance decreases with reduced thickness.
Carrier mobility decreases as thickness decreases.
Electron-hole imbalance increases with reduced thickness.
Abstract
We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, -MoTe, protected from oxidation. We find that the magnetoresistance is systematically suppressed with reduced thickness. This occurs concomitantly with both a decrease in carrier mobility and increase in electron-hole imbalance. We model the two effects separately and conclude that the XMR effect is more sensitive to the former.
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