Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures

TL;DR

This paper demonstrates quantum confinement and electron manipulation in InSe-based 2D heterostructures using electrostatic gating, highlighting potential for advanced electronic and optoelectronic devices.

Contribution

It introduces gate-controlled quantum dots and 1D quantization in InSe 2D materials, advancing device quality and application prospects.

Findings

Observation of gate-controlled quantum dots in Coulomb blockade regime

Detection of one-dimensional quantization with multiple conductance plateaus

InSe's potential for electronic and optoelectronic applications

Abstract

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.