Nanophotonic Pockels modulators on a silicon nitride platform

TL;DR

This paper introduces the first ferroelectric PZT-based electro-optic modulators on silicon nitride, achieving high bandwidth, low loss, and high data rates, advancing integrated photonics technology.

Contribution

It demonstrates the first PZT-based electro-optic modulators on SiN with high bandwidth and low voltage operation, filling a gap in active SiN photonics devices.

Findings

Bandwidths beyond 33 GHz achieved

Data rates of 40 Gbps demonstrated

Propagation losses around 1 dB/cm

Abstract

Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ($\alpha\approx 1$ dB/cm). A $V_\pi L\approx$ 3.2 Vcm is measured. Simulations indicate that values below 2 Vcm are achievable. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.