\emph{Ab initio} spin-strain coupling parameters of divacancy qubits in silicon carbide

TL;DR

This paper uses density functional theory to calculate spin-strain coupling parameters of divacancy qubits in silicon carbide, highlighting their potential for quantum sensing and photonic applications.

Contribution

It provides the first ab initio calculations of spin-stress coupling parameters for divacancy qubits in silicon carbide.

Findings

Divacancy in 3C SiC exhibits superior spin-stress coupling.

Enhanced stress sensitivity suitable for quantum devices.

Potential for integration into quantum sensing architectures.

Abstract

Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer scale device architectures for quantum information and sensing applications, where divacancy qubit, that is similar to the negatively charged nitrogen-vacancy (NV) center in diamond, has favorable coherence properties. We demonstrate by means of density functional theory calculations that divacancy in 3C SiC has superior spin-stress coupling parameters and stress sensitivity for nanoscale, quantum enhanced photonic, optoelectronic and optomechanical devices.