THz Transient Photoconductivity of the III-V Dilute Nitride GaPAsN
J. N. Heyman (1), E. M. Weiss (1), J. R. Rollag (1), K. M. Yu (2), O., D. Dubon (3), Y. J. Kuang (4), C. W. Tu (4), W. Walukiewicz (5) ((1), Macalester College, (2) City University of Hong Kong, (3) University of, California Berkeley, (4) University of California San Diego
TL;DR
This study uses THz time-resolved photoconductivity to investigate carrier dynamics in dilute GaPAsN, revealing localized carriers and bimolecular recombination, with implications for solar energy applications.
Contribution
It provides the first detailed measurement of carrier recombination and localization in GaPAsN using THz spectroscopy, highlighting its potential for solar energy devices.
Findings
Photoconductivity dominated by localized carriers
Recombination constant measured as 3.2E-8 cm^3/s
Implications for solar energy applications
Abstract
THz Time-Resolved Photoconductivity is used to probe carrier dynamics in the dilute III-V nitride GaP0.49As0.47N0.036. In these measurements a femtosecond optical pump-pulse excites electron-hole pairs, and a delayed THz pulse measures the change in conductivity. We find the photoconductivity is dominated by localized carriers. The decay of photoconductivity after excitation is consistent with bimolecular electron-hole recombination with recombination constant r = 3.2E-8 +/-0.8E-8 cm3/s. We discuss the implications for applications in solar energy.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.