Apparent spectral shift of thermally generated surface phonon-polariton resonance mediated by a non-resonant film
Vahid Hatamipour, Sheila Edalatpour, Mathieu Francoeur

TL;DR
This study explains how a non-resonant film can cause an apparent spectral shift in surface phonon-polariton resonance, affecting thermal emission and flux in near-field applications.
Contribution
It reveals the physical mechanism behind the spectral shift of SPhP resonance mediated by a non-resonant film using fluctuational electrodynamics.
Findings
LDOS exhibits a local maximum near SPhP frequency due to gap modes
Spectral shifts are bounded by SiC phonon frequencies
Gap modes significantly impact near-field thermal flux and spectroscopy
Abstract
The physical origin of spectral shift of thermally generated surface phonon-polariton (SPhP) resonance of a silicon carbide (SiC) bulk mediated by a non-resonant film is elucidated. The local density of electromagnetic states (LDOS) in a non-resonant intrinsic silicon (Si) film due to thermal emission by SiC, derived using fluctuational electrodynamics, exhibits a local maximum near SPhP resonant frequency in addition to a lower frequency resonance generated by gap modes emerging in the vacuum gap separating the SiC and Si layers. Multiple reflections within the vacuum gap also induce a LDOS drop around SPhP resonant frequency. As a result, depending on the film thickness to vacuum gap ratio and the location where the LDOS is calculated in the film, the low-frequency resonance can dominate the LDOS, such that SPhP resonance appears to be redshifted. A similar spectral behavior is…
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