Direct observation of near-field induced resonant electron tunneling in a sub-nanometer plasmonic gap

TL;DR

This paper demonstrates direct observation of near-field induced resonant electron tunneling in a sub-nanometer plasmonic gap using STM, revealing how LSPR excitation influences charge transfer and tunneling processes.

Contribution

It provides the first direct experimental evidence of LSPR-assisted resonant electron tunneling in a nanoscale gap, with tunable control and defect-level mapping.

Findings

LSPR excitation causes a photon-energy dependent red-shift of FERs.

Tunable contribution of LSPR-assisted and normal tunneling observed.

Defect mapping enables unambiguous FER level assignment.

Abstract

Localized surface plasmon resonance (LSPR) excitation of nanostructures and charge transfer in plasmonic nanocavities plays a central role in nanoscale optoelectronics and in applications for plasmonic devices. However, the direct observation of near-filed induced charge transfer has remained as a challenging experiment. Here we present LSPR-assisted resonant electron tunneling from an Ag or Au tip to the image potential states of a Ag(111) surface using scanning tunneling microscopy (STM). The LSPR-assisted tunneling process results in an incident photon-energy dependent red-shift of the field emission resonances (FERs) in the gap. Using the precise control of the gap distance in the STM junction we demonstrate tuning of the relative contribution from the LSPR-assisted and the normal STM electron tunneling processes. Furthermore, the FER intensity mapping of local defects on the surface allows assigning unambiguously the respective FER levels with and without laser excitation.