Comment on "Influence of image forces on the electron transport in ferroelectric tunnel junctions"
N.M. Chtchelkatchev, and A.V. Mikheyenkov

TL;DR
This paper critiques recent claims that image forces significantly enhance conductance and electroresistance effects in symmetric ferroelectric tunnel junctions, emphasizing the importance of electron tunneling times and dynamical effects.
Contribution
It demonstrates that the influence of image forces is overestimated in symmetric junctions due to neglecting electron tunneling times, highlighting the need to consider dynamical effects in tunneling physics.
Findings
Image force effects are overestimated in symmetric junctions.
Significant enhancement requires anomalously slow tunneling.
Dynamical effects are crucial for understanding tunneling phenomena.
Abstract
Udalov and Beloborodov in the recent papers [Phys. Rev. B 95, 134106 (2017); Phys. Rev. B 96, 125425 (2017)] report the strong influence of image forces on the conductance of ferroelectric tunnel junctions. In particular, the authors state that there is enhancement of the electroresistance effect due to polarization hysteresis in symmetric tunnel junctions at nonzero bias. This conjecture seems to be a breakthrough --- the common knowledge is that the considerable effect, linear over voltage bias, takes place only in NONsymmetric junctions. We show that the influence of image forces on the conductance of ferroelectric tunnel junctions is highly overestimated due to neglecting the difference between characteristic ferroelectric relaxation and electron tunneling times. We argue that notable enhancement of the electroresistance effect from image forces due to polarization hysteresis in…
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Taxonomy
TopicsMagnetic Field Sensors Techniques · Gas Sensing Nanomaterials and Sensors · Atomic and Subatomic Physics Research
