Tiered-Latency DRAM: Enabling Low-Latency Main Memory at Low Cost
Donghyuk Lee, Yoongu Kim, Vivek Seshadri, Jamie Liu, Lavanya, Subramanian, Onur Mutlu

TL;DR
This paper introduces Tiered-Latency DRAM (TL-DRAM), a cost-effective design that splits long bitlines into shorter segments to reduce latency, improving performance and energy efficiency.
Contribution
The paper proposes a novel TL-DRAM architecture that splits bitlines with isolation transistors, enabling low-latency access without high cost, and introduces mechanisms for hardware and software management.
Findings
Improved system performance with TL-DRAM mechanisms.
Enhanced energy efficiency in memory operations.
Reduced latency comparable to specialized low-latency DRAM.
Abstract
This paper summarizes the idea of Tiered-Latency DRAM (TL-DRAM), which was published in HPCA 2013, and examines the work's significance and future potential. The capacity and cost-per-bit of DRAM have historically scaled to satisfy the needs of increasingly large and complex computer systems. However, DRAM latency has remained almost constant, making memory latency the performance bottleneck in today's systems. We observe that the high access latency is not intrinsic to DRAM, but a trade-off is made to decrease the cost per bit. To mitigate the high area overhead of DRAM sensing structures, commodity DRAMs connect many DRAM cells to each sense amplifier through a wire called a bitline. These bit-lines have a high parasitic capacitance due to their long length, and this bitline capacitance is the dominant source of DRAM latency. Specialized low-latency DRAMs use shorter bitlines with…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsParallel Computing and Optimization Techniques · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
