Silicon Oxide Electron-Emitting Nanodiodes
Gongtao Wu, Zhiwei Li, Zhiqiang Tang, Dapeng Wei, Gengmin Zhang, Qing, Chen, Lian-Mao Peng, Xianlong Wei

TL;DR
This paper introduces silicon oxide-based electron-emitting nanodiodes that operate at low voltage, emit electrons rapidly with high density and efficiency, and are stable over time, offering a promising alternative to traditional thermionic sources.
Contribution
The work demonstrates a novel silicon oxide nanodiode with high emission density, efficiency, and stability, fabricated using a simple process, advancing on-chip electron source technology.
Findings
Nanodiodes can be turned on by ~7 V in ~100 ns.
Emission current reaches several microamperes with ~10^6 A cm^-2 density.
Stable emission observed over tens of hours with negligible degradation.
Abstract
Electrically driven on-chip electron sources that do not need to be heated have been long pursued because the current thermionic electron sources show the problems of high power consumption, slow temporal response, bulky size, etc., but their realization remains challenging. Here we show that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of ~7 V in ~100 ns and show an emission current of up to several microamperes, corresponding to an emission density of ~10^6 A cm^-2 and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal-insulator-metal tunneling diode on the substrate surface formed by the rupture of…
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