The role of surface chemical reactivity in the stability of electronic nanodevices based on two-dimensional materials "beyond graphene" and topological insulators

TL;DR

This paper investigates how surface chemical reactivity affects the stability and performance of nanodevices made from two-dimensional materials beyond graphene, highlighting material-specific behaviors and challenges.

Contribution

It provides a comparative analysis of surface reactivity impacts on various 2D materials and discusses stability issues relevant for device scalability.

Findings

Silicene and phosphorene undergo surface oxidation reducing mobility.

Indium selenide remains stable but experiences p-type doping from water decomposition.

Transition-metal dichalcogenides have low mobility, affecting response time.

Abstract

Here, we examine the influence of surface chemical reactivity toward ambient gases on the performance of nanodevices based on two-dimensional materials "beyond graphene" and novel topological phases of matter. While surface oxidation in ambient conditions was observed for silicene and phosphorene with subsequent reduction of the mobility of charge carriers, nanodevices with active channels of indium selenide, bismuth chalcogenides and transition-metal dichalcogenides are stable in air. However, air-exposed indium selenide suffers of p-type doping due to water decomposition on Se vacancies, whereas the low mobility of charge carriers in transition-metal dichalcogenides increases the response time of nanodevices. Conversely, bismuth chalcogenides require a control of crystalline quality, which could represent a serious hurdle for up scaling.