Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)

TL;DR

This study compares the structural, chemical, and electronic properties of multi-layer graphene grown on SiC(000-1) via thermal decomposition and CVD, highlighting differences in thickness control and crystallinity.

Contribution

It provides a comparative analysis of two graphene growth methods on SiC, emphasizing the advantages of CVD in thickness regulation.

Findings

CVD allows for better thickness control of graphene.

Crystallinity is comparable between the two methods.

Both methods produce multi-layer graphene with similar structural properties.

Abstract

This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.