Strongly correlated proton-doped perovskite nickelate memory devices

TL;DR

This paper presents proton-doped perovskite nickelate memory devices with ultra-fast switching speeds and multi-state non-volatile capabilities, advancing the potential of quantum materials in memory and neuromorphic computing.

Contribution

It introduces a novel proton doping technique in perovskite nickelates that achieves significantly faster switching speeds and multi-state memory functionalities.

Findings

Switching speeds up to 30 ns in two-terminal devices

Switching speeds are 300 times faster than previous proton-driven resistance switching

Devices exhibit multi-state non-volatile switching

Abstract

We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam lithography is observed. The state switching speed reported here are 300X greater than what has been noted with proton-driven resistance switching to date. The ionic-electronic correlated oxide memory devices also exhibit multi-state non-volatile switching. The results are of relevance to use of quantum materials in emerging memory and neuromorphic computing.