Uncertainty Quantification in Non-Equilibrium Molecular Dynamics Simulations of Thermal Transport
Manav Vohra, Ali Yousefzadi Nobakht, Seungha Shin, Sankaran Mahadevan

TL;DR
This paper introduces a statistical and sensitivity analysis framework for non-equilibrium molecular dynamics simulations of silicon's thermal conductivity, addressing uncertainties from simulation size, parameters, and methods.
Contribution
It develops a surrogate modeling approach to quantify and calibrate uncertainties in NEMD predictions of thermal transport in silicon.
Findings
Discrepancies in thermal conductivity estimates depend on system size.
Only two of seven potential parameters significantly affect uncertainty.
The surrogate model enables efficient sensitivity analysis and calibration.
Abstract
Bulk thermal conductivity estimates based on predictions from non-equilibrium molecular dynamics (NEMD) using the so-called direct method are known to be severely under-predicted since finite simulation length-scales are unable to mimic bulk transport. Moreover, subjecting the system to a temperature gradient by means of thermostatting tends to impact phonon transport adversely. Additionally, NEMD predictions are tightly coupled with the choice of the inter-atomic potential and the underlying values associated with its parameters. In the case of silicon (Si), nominal estimates of the Stillinger-Weber (SW) potential parameters are largely based on a constrained regression approach aimed at agreement with experimental data while ensuring structural stability. However, this approach has its short-comings and it may not be ideal to use the same set of parameters to study a wide variety of…
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