Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

TL;DR

This paper demonstrates terahertz detection of a magnetic field-driven topological phase transition in HgTe-based transistors, revealing nonlinear effects and quantum phase changes at low temperatures, with potential for topological terahertz devices.

Contribution

It introduces terahertz detection of topological phase transitions in HgTe transistors, highlighting nonlinear channel effects and room temperature operation possibilities.

Findings

Detection of quantum phase transition via terahertz signals

Observation of nonlinearities in HgTe transistor channels

Potential for room temperature topological terahertz devices

Abstract

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.