Trions and biexcitons in a nanowire

TL;DR

This paper develops a theoretical model for trions and biexcitons in nanowires, analyzing their binding energies, stability, and size dependence, with implications for optoelectronic applications.

Contribution

It introduces analytical expressions for binding energies of trions and biexcitons in nanowires using an effective-mass and Born-Oppenheimer approach, considering confinement and localization effects.

Findings

Biexciton binding energy exceeds trion binding energy in nanowires.

Trions and biexcitons are size-dependent and stable under certain dielectric conditions.

Optimal nanowire radius for optoelectronic applications is proposed.

Abstract

A theory of the trion and biexciton in a nanowire (NW) in the framework of the effective-mass model using the Born-Oppenheimer approximation is presented. We consider the formation of trions and biexcitons under the action of both the lateral confinement and the localization potential. The analytical expressions for the binding energy and eigenfunctions of the trion and biexciton are obtained and expressed by means of matrix elements of the effective one-dimensional cusp-type Coulomb potentials whose parameters are determined self-consistently by employing the same eigenfunctions of the confined electron and hole states. Our calculations for the ZnO/ZnMgO, CdSe/ZnS and CdSe/CdS core/shell cylindrical shaped NWs show that the trion and biexciton binding energy in NWs are size-dependent and for the same input parameters the biexciton binding energy in NWs is always larger than the binding energy of the trion. The trion and biexciton remain stable in CdSe/ZnS NW with the increase of the dielectric shell, while in ZnO/ZnMgO NW they become unstable when the surrounding dielectric shell exceeds 2.5 nm and 2 nm for each, respectively. The associative ionization of biexciton antibonding states into trion bonding states is studied. Based on the results for size dependence of biexciton binding energy and probability associative ionization an optimal radius for optoelectronic application NW is suggested.