High-performance Raman quantum memory with optimal control
Jinxian Guo, Xiaotian Feng, Peiyu Yang, Zhifei Yu, L. Q. Chen,, Chun-Hua Yuan, Weiping Zhang

TL;DR
This paper demonstrates a high-efficiency, high-fidelity atomic Raman quantum memory using optimal control in Rb87 vapour, achieving record efficiency and fidelity for practical quantum information applications.
Contribution
The authors develop an optimal control technique that significantly improves efficiency and fidelity in atomic Raman memories, surpassing previous limitations.
Findings
Memory efficiency of 82.6% for 10-ns pulses
Unconditional fidelity of 98.0%, exceeding no-cloning limit
Achieved highest efficiency in atomic Raman memories to date
Abstract
Quantum memories with high efficiency and fidelity are essential for long-distance quantum communication and information processing. Techniques have been developed for quantum memories based on atomic ensembles. The atomic memories relying on the atom-light resonant interaction usually suffer from the limitations of narrow bandwidth. The far-off-resonant Raman process has been considered a potential candidate for use in atomic memories with large bandwidths and high speeds. However, to date, the low memory efficiency remains an unsolved bottleneck. Here, we demonstrate a high-performance atomic Raman memory in Rb87 vapour with the development of an optimal control technique. A memory efficiency of 82.6% for 10-ns optical pulses is achieved and is the highest realized to date in atomic Raman memories. In particular, an unconditional fidelity of up to 98.0%, significantly exceeding the…
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