Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

TL;DR

This study demonstrates room-temperature spin-polarized tunneling in multilayer MoS2 devices, revealing measurable magnetoresistance and spin polarization, supported by theoretical calculations to understand spin transport mechanisms in 2D semiconductors.

Contribution

First experimental observation of spin-polarized tunneling in CVD multilayer MoS2 at room temperature with theoretical insights into spin transport.

Findings

TMR of 0.5-2% observed experimentally.

Spin polarization of 5-10% measured.

Theoretical TMR up to 8% and spin polarization of 26%.

Abstract

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) has attracted widespread attention for its extraordinary electrical, optical, spin and valley related properties. Here, we report on spin polarized tunneling through chemical vapor deposited (CVD) multilayer MoS2 (~7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5 - 2 % has been observed, corresponding to spin polarization of 5 - 10 % in the measured temperature range of 300 - 75 K. First principles calculations for ideal junctions results in a tunnel magnetoresistance up to 8 %, and a spin polarization of 26 %. The detailed measurements at different temperatures and bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomenon that control their performance.