Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension

TL;DR

This paper demonstrates the creation of ultra-dense memristor crossbars with 4.5 terabits per square inch and 2 nm device size, offering a power-efficient solution for high-density storage and computing.

Contribution

The authors develop memristor crossbars with unprecedented density and miniaturization, surpassing current NAND flash technology in storage capacity.

Findings

Achieved 4.5 terabits per inch square density in memristor crossbars.

Constructed memristors with 2 nm size capable of low current switching.

Provided a power-efficient high-density storage solution.

Abstract

Memristor is a promising building block for the next generation nonvolatile random access memory and bio-inspired computing systems. Organizing memristors into high density crossbar arrays, although challenging, is critical to meet the ever-growing high capacity and low energy demands of these applications especially in the big data era. Here, we construct memristor crossbars with a single-layer density up to 4.5 terabits per inch square, an order of magnitude denser than the state- of-the-art 64-layer triple level cell NAND flash technology. The memristors in the crossbars are 2 $\times$ 2 nm$^2$ in size, capable of switching with tens of nano ampere electric current. The densely packed memristor crossbars of extremely small working devices provides a power-efficient solution for high density information storage and processing.