Raman spectroscopy and In-situ Raman spectroelectrochemistry of isotopically engineered graphene systems
Otakar Frank, Mildred S. Dresselhaus, Martin Kalbac

TL;DR
This paper explores the use of in-situ Raman spectroelectrochemistry combined with isotope-engineered graphene to study layer interactions, doping effects, and material stress, advancing understanding of graphene's electronic properties.
Contribution
It introduces the application of isotope engineering in graphene combined with in-situ Raman spectroelectrochemistry to analyze interlayer and environmental interactions.
Findings
Isotope engineering enhances Raman analysis of graphene layers.
Electrochemical doping effectively shifts Fermi levels in graphene.
Layer interactions influence doping and stress responses.
Abstract
The unique properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset which extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, i.e., doping, represents a viable way of shifting the Fermi level. In particular, the electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in-situ Raman spectroscopy, i.e., the in-situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since…
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