Spin-Dependent Quantum Emission in Hexagonal Boron Nitride at Room Temperature

TL;DR

This study demonstrates room-temperature spin-dependent quantum emission in hexagonal boron nitride, revealing optically addressable spin defects that could advance quantum technologies in two-dimensional materials.

Contribution

First observation of spin-dependent inter-system crossing in h-BN at room temperature, establishing it as a promising platform for quantum information and sensing.

Findings

Anisotropic photoluminescence patterns depend on magnetic field orientation.

Photon emission statistics vary with magnetic field, indicating spin-dependent processes.

Presence of optically addressable spin defects in h-BN confirmed.

Abstract

Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing (ISC) transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters (QEs), but spin-related effects have yet to be observed. Here, we report room-temperature observations of strongly anisotropic photoluminescence (PL) patterns as a function of applied magnetic field for select QEs in h-BN. Field-dependent variations in the steady-state PL and photon emission statistics are consistent with an electronic model featuring a spin-dependent ISC between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN $-$ a versatile two-dimensional material promising efficient photon extraction, atom-scale engineering, and the realization of spin-based quantum technologies using van der Waals heterostructures.